Department of Electrical Engineering

Physical Basis of Semiconductor Devices

 

Course ECSE 533/432 B Winter 2007

 

Instructor :   I. Shih
                   Phone : 398-7147,

Office: MC707

          E-mail: shih@ece.mcgill.ca
                    

Lecture:       Trottier Building 1080, T R 10:05 – 11:25

 

Office hours: MC707 W 10:00 – 12:30 

                    

                                  

Prerequisites: ECSE 330, ECSE 351, and PHYS 271
 

TA:             Jeanne Shih

                  

 

 

Course web: http://www.ece.mcgill.ca/~info533/ and http://www.ece.mcgill.ca/~info432/

                                                                                                                            

 

Course Description:

Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models. 

 

Grading:

 

432

533

Assignments

15%

15%

Midterm Exam

25%

20%

Oral Exam

N/A

15%

Final Exam

60%

N/A

Final Project*

N/A

50%

 

*Project topics will be announced in late January.

 

Text book:

Modular series on solid state devices volume I – IV, Prentice Hall

Vol I   – Semiconductor Fundamentals, 2nd edition, R.F.Pierret

Vol II  – The PN junction diode, 2nd edition, G.W. Neudeck

Vol III – The bipolar junction transistor, 2nd edition, G.W. Neudeck

Vol IV – Field effect devices, 2nd edition, R.F.Pierret

 

Reference:

Semiconductor Physics and Devices – Basic Principles SE by D. A. Neamen, Irwin.